The API21550 from Diodes Incorporated is an isolated high-side/low-side half-bridge gate driver designed for demanding power conversion applications. Offering up to 4A peak source and 6A peak sink current capability, the API21550 supports the driving requirements of GaN, MOSFET, IGBT, and SiC power devices across a wide range of industrial and energy systems.
The device features low propagation delay, minimal pulse-width distortion, and high common-mode transient immunity (CMTI) greater than 125V/ns for reliable operation in noisy switching environments. Integrated shoot-through protection with resistor-programmable dead time, an active pulldown function, and a 14 ns deglitch filter help improve system reliability and simplify design. With reinforced isolation ratings up to 5700 VRMS, the API21550 is well suited for high-voltage and safety-critical power applications.
Features
- Isolated high-side/low-side half-bridge gate driver
- Up to 4A peak source and 6A peak sink output current
- Input-side supply voltage range: 3V to 5.5V
- Supports GaN, MOSFET, IGBT, and SiC power devices
- Common-mode transient immunity (CMTI) >125V/ns
- Up to 25V output drive supply (VDD)
- 5V, 8V, and 12V VDD UVLO options
- Typical 40ns propagation delay
- Maximum 8ns delay matching
- Maximum 7ns pulse-width distortion
- Maximum 10µs VDD power-up delay
- Integrated 14ns deglitch filter for enhanced noise immunity
- Shoot-through protection with resistor-programmable dead time
- Active pulldown feature
- Isolation barrier lifetime greater than 40 years
- Reinforced isolation up to 5700 VRMS in wide-body packages
Applications
- Motor drives
- Solar inverters
- Uninterruptible power supplies (UPS)
- Isolated AC-DC power supplies
- Isolated DC-DC converters
- Server power systems
- Telecom infrastructure
- IT equipment
- Industrial power systems
- Industrial transportation