The Nexperia GANE1R8-100QBAZ is a 100V enhancement-mode Gallium Nitride (GaN) FET designed to deliver exceptional switching performance and efficiency in demanding power conversion applications. Featuring an ultra-low RDS(on) of 1.8mΩ and housed in a compact 4.0 mm × 6.0 mm Very-Thin-Profile Quad Flat No-Lead (VQFN) package, the device enables high power density designs while minimizing conduction and switching losses.
Leveraging the benefits of e-mode GaN technology, the GANE1R8-100QBAZ offers ultra-high-frequency switching capability, low gate charge, and low output charge, helping designers improve efficiency and reduce system size. The absence of a body diode further enhances switching performance, making the device ideal for high-power applications operating at voltages up to 150V.
Features
- 100V enhancement-mode (normally-off) GaN FET
- Ultra-low 1.8mΩ RDS(on)
- 4.0 mm × 6.0 mm Very-Thin-Profile VQFN package
- Ultra-high-frequency switching capability
- No body diode
- Low gate charge (Qg)
- Low output charge (QOSS)
- High efficiency and high power density
- Optimized for advanced power conversion systems
- Qualified for standard applications
- RoHS compliant
- Pb-free
- REACH compliant
Applications
- 400V to 48V LLC converters for data centers
- 48V point-of-load (POL) direct conversion
- High-efficiency AC-DC power supplies
- Fast charging systems for e-mobility
- USB-C Power Delivery fast chargers
- LiDAR systems (non-automotive)
- Class D audio amplifiers
- High-power systems operating at ≤150V