The ROHM Semiconductor SCT4018KTWHR is a 1200V silicon carbide (SiC) MOSFET designed for high-efficiency automotive and industrial power conversion applications. Utilizing ROHM’s trench-structure SiC technology, the device delivers excellent switching performance, low conduction losses, and improved power density for demanding high-voltage systems.
Rated for 79A operation and housed in a compact 9-pin surface-mount package, the SCT4018KTWHR enables designers to build smaller, more efficient power systems for electric vehicles, renewable energy systems, and advanced power supplies. The benefits of SiC technology help reduce switching losses, improve thermal performance, and support higher switching frequencies compared to conventional silicon devices.
Features
- 1200V silicon carbide (SiC) MOSFET
- 79A continuous current capability
- Advanced trench-structure SiC technology
- 9-pin surface-mount package
- High-efficiency switching performance
- Low switching and conduction losses
- High power density design
- Optimized for high-voltage power conversion
- Supports compact and efficient system designs
- Automotive-grade device
Applications
- Electric vehicles (EV)
- Automotive power systems
- Power supplies
- Renewable energy systems
- Solar inverters
- Energy storage systems
- Industrial power converters
- High-efficiency power electronics