Infineon CoolGaN™ Drive combines high-performance gallium nitride (GaN) power transistors with intelligent gate driver technology and integrated current sensing in a compact, easy-to-implement solution. Designed to simplify the development of high-efficiency power systems, CoolGaN™ Drive reduces design complexity while enabling higher power density, improved thermal performance, and a lower bill of materials.
Featuring an integrated gate driver, built-in protection functions, and a half-bridge configuration with a bootstrap diode, CoolGaN™ Drive helps engineers accelerate development of next-generation power conversion systems. Top-side cooled package options further improve thermal management, making the solution well suited for demanding industrial, renewable energy, and mobility applications.
Features
- Integrated GaN transistors and intelligent gate driver
- Integrated current sensing capability
- Half-bridge power stage configuration
- Built-in bootstrap diode
- Integrated protection features
- High power density design
- Reduced bill of materials (BOM)
- Top-side cooled package options
- Simplified power system design
- Optimized for high-efficiency power conversion applications
Applications
- Motor control
- Power supplies
- Renewable energy systems
- Robotics
- EV charging equipment
- Power factor correction (PFC)
