CoolGaN™ Transistor 100 V G3 in PQFN 3×5, 2.4 mΩ
The IGC033S10S1 100 V e-mode power transistor by Infineon is designed to meet the demands of high-voltage, high-current applications while enabling compact, high-power-density designs. Its small PQFN 3×5 package and dual-side cooled construction contribute to exceptional thermal performance and efficiency. With low on-state resistance, low gate and output charge, and no reverse recovery charge, this device offers outstanding reliability and performance across a range of applications.
Key Features
- 100 V enhancement-mode power transistor
- Dual-side cooled PQFN 3×5 package
- No reverse recovery charge
- Reverse conduction capability
- Low gate charge, low output charge
- JEDEC-qualified
Advantages
- Industry-leading power density
- Maximized efficiency
- Optimized thermal management
- Supports more compact, lightweight designs
- High reliability for demanding applications
- Helps lower overall BOM cost
Applications
- Audio amplifier solutions
- Low-power BDC/BLDC motor drives up to 72 V
- Photovoltaics
- Telecommunications infrastructure
This advanced power transistor delivers efficiency, reliability, and performance, making it an excellent choice for engineers developing next-generation power solutions.
